Monday, November 7 |
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| 2005 EUV Symposium Opening Address |
Kevin Kemp, SEMATECH/Freescale |
| Keynote |
Paolo Gargini, Intel |
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| TOOL |
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| Progress on the Realization of EUV Lithography |
Hans Meiling |
| Canon's Development Status of EUVL Technologies |
Shigeyuki Uzawa |
| Progress on the development of EUV exposure tool in Nikon |
Takaharu Miura |
| EXCITE, the MEDEA+ Extreme UV Consortium for Imaging Technology |
Peter Zandbergen |
| EUVL capabilities at Albany NanoTech |
James Ryan |
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| SOURCE 1 |
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| Next Generation Extreme Ultraviolet Sources for Lithography Applications |
Vadim Banine |
| Development Status of EUV Sources for Use in Beta-Tools and High Volume Chip Manufacturing Tools |
Uwe Stamm |
| Xe- and Sn-fueled Z-pinch EUV source development aiming at HVM |
Yusuke Teramoto |
| EUV Generation Using a Droplet of Tin Particle Suspension |
Toshihisa Tomie |
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| Asia/Pacific Regional Update |
Yasuhiro Horiike, National Institute of Material Science (NIMS), Japan |
| Development of CO 2 Laser Produced Xe Plasma EUVL Source for Microlithography |
Hakaru Mizoguchi, Invited Speaker (Asia/Pacific) |
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| SOURCE 2 |
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| LPP EUV Source Development for HVM |
Bjorn Hansson |
| The Philips' Extreme UV Source: Recent Progress in Power, Lifetime and Collector Lifetime |
Joseph Pankert |
| Optimisation of Optical Design in Grazing Incidence Collector for EUVL DPP Sources |
Fabio Zocchi |
| Progress Towards Sn DPP and LPP Solution: a source-collector perspective |
David N. Ruzic |
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| SOURCE 3 |
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| The Tin-Doped Droplet Laser Plasma Source – Satisfying EUVL Requirements |
Martin Richardson |
| Comprehensive Integrated Simulation and Optimization of Laser Produced Plasma for EUV Lithography Devices |
Ahmed Hassanein |
| Radiation Hydrodynamic Simulation of EUV Emission from Laser-Produced Plasmas |
Atsushi Sunahara |
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| MASK 1 |
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| EUV lithography related inspection and metrology research activities at MIRAI |
Tsuneo Terasawa |
| Actinic Inspection of Multilayer Coated EUV Masks at the ALS |
Anton Barty |
| Extreme Ultraviolet Phase Contract Imaging of Mask Defects |
Gregory Denbeaux |
Tuesday, November 8 |
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| EU Regional Update |
Rob Hartman, ASML |
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| RESIST 1 |
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| Patterning Performance of Molecular Resists from the ASET-HINA |
Hiroaki Oizumi |
| Microstepper vs. Interference EUV lithography: effects on resist profiles |
Mieke Goethals |
| EUV Resist Sensitivity Targets |
Michael J. Leeson |
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| The Integrated EUV Mask Process at the Advanced Mask Technology Center (AMTC) in Dresden |
Uwe Dersch, Invited Speaker (Europe) |
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| MASK 2 |
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| Smoothing EUVL mask substrate defects much faster and application of the smoothing process to real-world defects |
Paul B. Mirkarimi |
| Critical Challenges of EUV Mask Blank Volume Production |
Holger Seitz, |
| Development of Zero Expansion Glass for EUVL Substrate |
Yasutomi Iwahashi |
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| MASK 3 |
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| Recent Advances in the Development a Low-Defect Mo/Si Deposition Tool and Process for EUVL Mask Blanks |
Rajul Vandeev |
| Impact of Layout Dependent Flare on Printing in EUVL |
Frank-Michael Kamm |
| Printing EUV Phase-shift Masks using the 0.3NA Berkeley Micro-exposure Tool |
Bruno La Fontaine |
Wednesday, November 9 |
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| RESIST 2 |
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| Resolution of EUV Photoresists Designed with Reduced Activation Energy |
Jim Thackeray |
| Fundamentals of the Reaction-Diffusion Process in Model EUV Photoresists |
Bryan D. Vogt |
| Lithographic performance of EUV resists based on polymers having a photoacid generator in the backbone |
Ken Gonsalves |
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| OPTICS 1 |
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| Lithographic Characterization of Low-Order Aberrations in the Berkeley MET Tool |
Patrick P. Naulleau |
| Optics for EUV Lithography |
Peter Kuerz |
| Scaling EUV lithography beyond 0.25 NA with applications to patterning contacts |
Manish Chandhok |
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| CONTAMINATION & CLEANLINESS 1 |
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| Model of Ru Surface Oxidation for the Lifetime Scaling of EUVL Projection Optics Mirror |
Iwao Nishiyama |
| Interaction of Water Vapor with Clean and Contaminated Ru Surfaces |
T.E. Madey |
| EUV Endurance Testing of Ruthenium-Capped Multilayer Mirrors |
Shannon Hill |
| Contamination Sensing and Control for EUV Multilayer Optics |
Anthony Keen |
| Lifetime Improvement of Projection Mirror with Ru Capping Layer for EUVL by Irradiation Atmosphere |
Yukinobu Kakutani |
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| U.S. Regional Update |
Stefan Wurm, SEMATECH |
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| Investigation of the Current Resolution Limits of Advanced EUV Resists |
Patrick P. Naulleau, Invited Speaker (North America) |
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| CONTAMINATION & CLEANLINESS 2 |
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| Protective Capping Layer for EUVL Optics Using TiO 2 |
Sasa Bajt |
| Lifetime estimation and improvement of capping layer on multi-layer mirror for EUV Lithography in EUVA |
Shuichi Atsunari |
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| METROLOGY |
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| High-precision (<1ppb/°C) Optical Heterodyne Interferometric Dilatometer for Low Thermal Expansion Materials |
Yoshimasa Takeichi |
| Cross Section and Line Edge Roughness Metrology for EUV Lithography using Critical Dimension Small Angle X-ray Scattering (CD-SAXS) |
Ron Jones |
| CD characterization of EUV masks by EUV scatterometry |
Frank Scholze |
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| MASK 4 |
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| Recent Progress in EUV Blanks Development at HOYA |
Tsutomu Shoki |
| Recent advances in the cleaning of EUV substrates |
Abbas Rastegar |
| Scaling of the Adhesion between Particles and Surfaces from Micron-Scale to the Nanometer Scale for Photomask Cleaning Applications |
Steve Beaudoin |
| Concept Demonstration of Integrated Particle Defect Control of EUVL Masks |
Kevin Orvek |
| Improved Reticle Carrier Design Through Numerical Simulation |
Anthony Geller |
| Closing Remarks |
Kevin Kemp |