EUVL Symposium 2005 Proceedings

Poster Session Proceedings are also available

Monday, November 7

 
2005 EUV Symposium Opening Address Kevin Kemp, SEMATECH/Freescale
Keynote Paolo Gargini, Intel
   
TOOL  
Progress on the Realization of EUV Lithography Hans Meiling
Canon's Development Status of EUVL Technologies Shigeyuki Uzawa
Progress on the development of EUV exposure tool in Nikon Takaharu Miura
EXCITE, the MEDEA+ Extreme UV Consortium for Imaging Technology Peter Zandbergen
EUVL capabilities at Albany NanoTech James Ryan
   
SOURCE 1  
Next Generation Extreme Ultraviolet Sources for Lithography Applications Vadim Banine
Development Status of EUV Sources for Use in Beta-Tools and High Volume Chip Manufacturing Tools Uwe Stamm
Xe- and Sn-fueled Z-pinch EUV source development aiming at HVM Yusuke Teramoto
EUV Generation Using a Droplet of Tin Particle Suspension Toshihisa Tomie
   
Asia/Pacific Regional Update Yasuhiro Horiike, National Institute of Material Science (NIMS), Japan
Development of CO 2 Laser Produced Xe Plasma EUVL Source for Microlithography Hakaru Mizoguchi, Invited Speaker (Asia/Pacific)
   
SOURCE 2  
LPP EUV Source Development for HVM Bjorn Hansson
The Philips' Extreme UV Source: Recent Progress in Power, Lifetime and Collector Lifetime Joseph Pankert
Optimisation of Optical Design in Grazing Incidence Collector for EUVL DPP Sources Fabio Zocchi
Progress Towards Sn DPP and LPP Solution: a source-collector perspective David N. Ruzic
   
SOURCE 3  
The Tin-Doped Droplet Laser Plasma Source – Satisfying EUVL Requirements Martin Richardson
Comprehensive Integrated Simulation and Optimization of Laser Produced Plasma for EUV Lithography Devices Ahmed Hassanein
Radiation Hydrodynamic Simulation of EUV Emission from Laser-Produced Plasmas Atsushi Sunahara
   
MASK 1  
EUV lithography related inspection and metrology research activities at MIRAI Tsuneo Terasawa
Actinic Inspection of Multilayer Coated EUV Masks at the ALS Anton Barty
Extreme Ultraviolet Phase Contract Imaging of Mask Defects Gregory Denbeaux

Tuesday, November 8

 
   
EU Regional Update Rob Hartman, ASML
   
RESIST 1  
Patterning Performance of Molecular Resists from the ASET-HINA Hiroaki Oizumi
Microstepper vs. Interference EUV lithography: effects on resist profiles Mieke Goethals
EUV Resist Sensitivity Targets Michael J. Leeson
   
The Integrated EUV Mask Process at the Advanced Mask Technology Center (AMTC) in Dresden Uwe Dersch, Invited Speaker (Europe)
   
MASK 2  
Smoothing EUVL mask substrate defects much faster and application of the smoothing process to real-world defects Paul B. Mirkarimi
Critical Challenges of EUV Mask Blank Volume Production Holger Seitz,
Development of Zero Expansion Glass for EUVL Substrate Yasutomi Iwahashi
   
MASK 3  
Recent Advances in the Development a Low-Defect Mo/Si Deposition Tool and Process for EUVL Mask Blanks Rajul Vandeev
Impact of Layout Dependent Flare on Printing in EUVL Frank-Michael Kamm
Printing EUV Phase-shift Masks using the 0.3NA Berkeley Micro-exposure Tool Bruno La Fontaine

Wednesday, November 9

 
RESIST 2  
Resolution of EUV Photoresists Designed with Reduced Activation Energy Jim Thackeray
Fundamentals of the Reaction-Diffusion Process in Model EUV Photoresists Bryan D. Vogt
Lithographic performance of EUV resists based on polymers having a photoacid generator in the backbone Ken Gonsalves
   
OPTICS 1  
Lithographic Characterization of Low-Order Aberrations in the Berkeley MET Tool Patrick P. Naulleau
Optics for EUV Lithography Peter Kuerz
Scaling EUV lithography beyond 0.25 NA with applications to patterning contacts Manish Chandhok
   
CONTAMINATION & CLEANLINESS 1  
Model of Ru Surface Oxidation for the Lifetime Scaling of EUVL Projection Optics Mirror Iwao Nishiyama
Interaction of Water Vapor with Clean and Contaminated Ru Surfaces T.E. Madey
EUV Endurance Testing of Ruthenium-Capped Multilayer Mirrors Shannon Hill
Contamination Sensing and Control for EUV Multilayer Optics Anthony Keen
Lifetime Improvement of Projection Mirror with Ru Capping Layer for EUVL by Irradiation Atmosphere Yukinobu Kakutani
   
U.S. Regional Update Stefan Wurm, SEMATECH
   
Investigation of the Current Resolution Limits of Advanced EUV Resists Patrick P. Naulleau, Invited Speaker (North America)
   
CONTAMINATION & CLEANLINESS 2  
Protective Capping Layer for EUVL Optics Using TiO 2 Sasa Bajt
Lifetime estimation and improvement of capping layer on multi-layer mirror for EUV Lithography in EUVA Shuichi Atsunari
   
METROLOGY  
High-precision (<1ppb/°C) Optical Heterodyne Interferometric Dilatometer for Low Thermal Expansion Materials Yoshimasa Takeichi
Cross Section and Line Edge Roughness Metrology for EUV Lithography using Critical Dimension Small Angle X-ray Scattering (CD-SAXS) Ron Jones
CD characterization of EUV masks by EUV scatterometry Frank Scholze
   
MASK 4  
Recent Progress in EUV Blanks Development at HOYA Tsutomu Shoki
Recent advances in the cleaning of EUV substrates Abbas Rastegar
Scaling of the Adhesion between Particles and Surfaces from Micron-Scale to the Nanometer Scale for Photomask Cleaning Applications Steve Beaudoin
Concept Demonstration of Integrated Particle Defect Control of EUVL Masks Kevin Orvek
Improved Reticle Carrier Design Through Numerical Simulation Anthony Geller
Closing Remarks Kevin Kemp