2nd International EUVL Symposium Poster Index

  TITLE AUTHOR(S) / AFFILIATION
 
CONTAMINATION
  
1

Short Term Vacuum Outgassing Measurement by the Pressure Rise Method

 Anthony M. Keen et al (BOC Edwards)
2 PPT (10-9mbar) Sensor for Organic Contamination Detection in Next Generation Lithography Tools Robert B. Grant et al (BOC Edwards)
3 Quasi Steady-state Measurements of Sub 1-minute Vacuum Outgassing Rates & Application to EUV Photoresists Neil Condon et al (BOC Edwards)
4 Optics Contamination Under Pulsed EUV Radiation Bas Mertens et al (TNO TPD); Vadim Banine et al (ASML); Markus Weiss (Carl Zeiss AG)
5 The Optics Contamination/Lifetime Program: An Overview of Supporting Facilities Bas Mertens et al (TNO TPD); Markus Weiss et al(Carl Zeiss AG); Hans Meiling et al (ASML); Roman Klein et al (PTB); Eric Louis et al (FOM); Peer Zalm et al (Phililps Research)
6 Evaluation of Contamination Deposition on Pinholes Used in EUV Wavefront Metrology K. Sugisaki et al (EUVA); M. Niiba et al (Himeji Institute of Technology)
     
 
MASK
  
8 Analysis of Uneven EUV Mask Structure Jong Hoi Kim et al (Hanyang University)
9 Effect of EUV Light Scattering from the Rough Absorber and Buffer Side Yeong-Keum Kwan et al (Hanyang University)
10 Atomatistic Investigation of the Si/Mo (110) Interface for EUV Reflectors In-Yang Kang et al (Hanyang University)
13 Evaluation of Property Change by the Insertion of Ru Layer into Mo/Si Multilayer Jin-Ho Ahn et al (Hanyang University)
15 Current Efforts Towards Standardization of EUVL Mask (Reticles) Brian Blum et al (ASML); Scott Hector et al (Motorola/International SEMATECH)
16 Detection of Buried Defect Using Actinic Darkfield Microscopy W. Farys et al (STMicroelectroics); P. Schiavone et al (Laboratories des Technologies de la Microelectronique-CNBS); F. Polock et al (SOLEIL); C. Vannuffel et al (CEA-Leti); M. Bertolo et al (Sincrotrone Trieste)
17 Development of a New Stripping Process for EUV Masks C. Charpin Nicolle (CEA-Leti)
18 Impact of Flatness Correction Technologies on the Quality of EUVL Masks Blank Substrates Frauke Ruggeberg et al (Schotte Lithotec AB)
19 Development of Modified Zero Expansion Ti-dope Silica Glass for EUVL Substrate Yasutomo Iwahashi et al (ASET)
20 An Ellipsometric Picometer Sputtering-Rate Monitor for Exact EUV Multilayer Fabrication Masaki Yamamoto et al (Tohoku University)
21 Correlation Between Printability and Visibility of Defects in EUV Mask Blanks Masaaki Ito et al (ASET); Toshihisa Tomie (AIST) 
22 Visible Light Inspection of Mo/Si Multilayer Mask Blanks Takao Hashimoto et al (ASET)
23 Characteristics of TaGeN Films for EUVL Mask Absorber Yuusuke Tanaka et al (ASET)
24 Evaluation of Pattern Fidelity on Reflectance of Absorber Surface Minoru Suguwara et al (ASET)
25 Efficient Simulation of Multilayer Defects on 2D and 3D EUV Masks Peter Evanschitzsky et al (Fraunhofer Institute); Thomas Schmoller (Sigma C)
26 Mask Induced Imaging Artifacts in Extreme Ultraviolet Lithography Andreas Erdmann et al (Fraunhofer Institute); Thomas Schmoller (Sigma C)
27 Mo/Si Multilayers with Arbitrary Period Thickness Distribution S. Braun et al (Fraunhofer Institute)
28 Defect Repair for EUVL Mask Blanks Stefan P. Hau-Riege et al (Lawrence Livermore National Lab); Eric Gullickson (Lawrence Berkeley National Lab); Daniel G. Stearns (OS Associates)
30 High Accuracy Measurement of Thermal Expansion J. Alkemper et al (Schott Glas); L. Aschke et al (Schott Lithotec); J. Schwider et al (Friedrich-Alexander-Universitat)
31 Large Area Sputtering System for EUVL Optics Torsten Feigl et al (Fraunhofer Institute)
33 Vector Diffraction Simulation for EUV Mask Illuminated by Focused Waves Seong-Sue Kim et al (Samsung Electronics)
34 High-Speed EUV-Reflectrometer for Mask-Blank Inspection Ranier Lebert et al (AIXUV GmbH); Lutz Aschke et al (Schott Lithotec); Gerhard Ulm et al (PTB); Konstantin Walter et al (Fraunhofer Institute)
35 EUV Mask Development at LETI: Latest Results J. Hue et al (LETI/CEA, G-DOPT)
36 Sagem Progress on EUV Mask Substrates Polishing Roland Geyl et al (Sagem)
37 Initial Results of Photomask-Blank Deposition Tool Michael D. Kriese et al (Osmic Inc.)
39 A New Absorber Material Enables EUV Masks with Enhanced Etch Conotrol and CD Uniformity Frank Sobel et al (Schott Lithotec); Florian Letzkus et al (Ims Chips); Jenspeter Rau et al (Infineon Technologies AG)
40 Nanoscale Surface Cleaning of EUV Reticles Ashmed A. Busnaina et al (Northeastern University); JinGoo Park (Hanyang University); Arun Ramamoorthy et al (Intel Corporation)
41 At-wavelength Defect Inspection of EUV Mask Blanks Anton Barty et al (Lawrence Livermore National Laboratory); Yanwei Liu (Lawrence Berkeley National Laboratory); Phil Seidel (International SEMATECH)
42 Progress in EUV Mask Manufacture to Meet P37/P38 Specifications C.C. Walton et al (Lawrence Livermore National Laboratory); D.W. Pettibone (KLA Tencore, Inc.); Phil Seidel (International Seidel)
44 In Situ-Ellipsometric Investigation of Mo-Si Multilayer Growth for EUV Mask Blank Manufacturing E. Schubert et al (Leipzig Institut fur Oberflachenmodifizierung)
     
 
METROLOGY
  
45 Non-Linearities in Photodiode Response at High Intensities C. Tarrio et al (NIST)
47 Development and AIMST EUV at Carl Zeiss Karl-Heinz Bechstein et al (Carl Zeiss)
48 Table-top Laser-based EUV Source for Metrology K. Mann et al (Laser-Laboratorium Gottengen e.V.)
49 Commercial EUV Source for At-Wavelength Metrology A. Egbari et al (Laser Zentrum Hannover E.V.); S. Becker et al (phoenix/euv systems + Services GmbH)
51 Compact In-line EUV Laser Plasma Reflectometer for the Measurement Reflectivity and Uniformity of EUV Lithography Mask Blank Multilayer Coatings Rupert Perrera et al (EUV Technology
53 Novel Instrumentation for In- and Out of Band Metrology of EUVL Sources L.A. Shmaenok (Phystek); N.N. Salashchenko et al (IPM); V.L. Sukhanov et al (A.F. Ioffe Institutte); V. Banine (ASML)
     
 
OPTICS
  
55 Aerial Image Simulations using ETS-POB2 Interferometer Data Marcel Dierche et al (ASML)
57 Performance of the IWS EUV Reflectometer using LPP Source Ludwig van Loyen et al (Fraunhofer Institute); Frank Scholze (PTB); Holtger Stiel (Max-Born-Institut); Christian Rempel (Fa. Bestec GmbH); Stephen Mullender (Fa. Carl Zeiss AG)
58 Recent Advances of the Visible Point Diffraction Interferometer for EUVL Aspheric Mirrors K. Otaki et al (EUVA)
61 Comparison of Techniques to Measure the Point Spread Fumction due to Scatter and Flare in EUVL Systems Manish Chandhok et al (Intel Corporation)
     
 
RESIST
  
63 Characterization of the Spatial Aspects of Line Edge Roughness V. Constandoudis et al (Institute of Microelectronics)
65 Characterization of Outgassing for EUV Technology Wang Yueh at al (Intel Corporation; Victoria Golovkina et al (University of Wisconsin)
66 Inband EUV Open Frame Resist Exposure TEUVL Rainer Lebert et al (AIXUV); Karl Kragler et al (Infineon Technologies AG)
67 Techniques for Directly Measuring the Absorbance of Photoresists at EUV Wavelengths Manish Chandhok et al (Intel Corporation); Erik Gullickson (Lawrence Berkely National Laboratory); Robert Brainard et al (Shipley Company)
68 Origins of Photoresist Roughness: Monte Carlo Simulation of the Development Process and Scaling Analysis  G.P. Patsis et al (Institute of Microelectronics)
     
 
SOURCE
  
70 EUVL Source Optimisation for 13.5nm Operation A. Cummings et al (University College Dublin)
72 The Generation of EUV Light with a Compact ECR Source K.-N. Leung et al (Lawrence Berkeley National Laboratory); Q. Ji (Harvard University); D. Schneider (Lawrence Livermore National Laboratory); Vivek Bakshi (International SEMATECH)
73 Extreme Ultra-Violet Generation Pumped by CO2 Laser Produced Plasma Akihiko Takahashi et al (Kyushu University)
74 Development of a Laser Produced Plasma Source for Extreme Ultra Violet Lithography C. Soullie et al (CEA/DAM)
78 Characteristics of Capillary Z-pinch Discharge Light Source Eric Hotta et al (Tokyo Institute of Technology)
79 Theoretical Spectroscopy of the EUV Emission of Xe and Sn Akira Sasaki (Japan Atomic Energy Research Institute); Fumihiko Koiki (Kitasato University); Katsunobu Nishibara (Osaka University)
80 EUV Yield Enhancement Due to Propagating Shockwaves in laser Plasma Sources Rene de Bruijn et al (FOM Institute)
81 Atomic Model and Equation of State fo Hydrodynamic Simulation of Laser Plasma Sources Takeshi Nishikawa (Okayama University); Hiroyuki Furukawa et al (Institute of Laser Technologoy); Katsunobu Nishihara (Osaka University)
82 Radiation Characteristics of a Capillary Z-pinch EUV Source Yusuka Teramoto et al (EUVA)
85 Radiation Hydrodynamic Simulations of Laser-Produced Plasma for EUVL Atushi Sunahara et al (Institute for Laser Technology); Takeshi Nishikawa (Okayama University); Masakatsu Murakami et al (Osaka University)
86 ZZ-pinch EUV Source Driven by a 1W Blumlein Generator Sunao Katsuki et al (Kumamoto University); Takashi Sakugawa (Meidenshe Corporation)
87 Rotating Cryogenic Drum for Continuous Supply of Solid Xe Target Keisuke Fukkugaki et al (Himeiji Institute of Technology)
89 The Pinch Plasma of the Philips Extreme UV Source Thomas Krucken (Philips Research Laboratories)
92 Dependence of EUV Emission Properties on Drive Laser Wavelength M. Yamaura et al (Institute for Laser Technology); M. Nakai et al (Osaka University); T. Nishikawa (Okayama University)
93 Fabrication of Porous Tin (IV) Oxide as a Laser-Plasma EUV Source Target  K. Nagai et al (Osaka University)
94 Detailed Analysis of the Optical Scheme for the EXULITE LLP Source P.-Y. Thro et al (CEA/Sanclay)
95 Modular Laser-Plasma EUV Power Source for Micro-Lithography Benoit Barthod et al (Alcatel Vacuum Technology); J. Skrzypozak et al (Thales Laser S.A.); C. Bonnefoy et al (C.E. de Saclay)
96 Thermal and Fluid Modeling for the EXULITE LLP Source Benoit Barthod et al (Alcatel Vacuum Technology)
97 Xenon Pumping and Recycling System for the EXULITE LLP Source Benoit Barthod et al (Alcatel Vacuum Technology)
98 Ionization & Excitation Rate Coefficient Calculation for Plasma Emitting in EUV Range Vassili S. Zakharov (Keldysh Institute of Applied Mathematics RAS)
99 EUV-Technology with Discharge "EUV-Lamp" Rainer Lebert et al (AIXUV GmbH)
101 Experimental Study on Basic Properties of Laser-Produced Plasma as an EUV Source on GEKKO XII M. Nakai et al (Osaka University); S. Uchida et al (Institute for Laser Technology); T. Nishikawa (Okayama University)
102 Characterization of EUV Emission from Laser Produced Low-Density Tin-Oxidized Plasmas H. Nishimura et al (Osaka University); M. Yamaura et al (Institute for Laser Technology); T. Nishikawa et al (Okayama University)
104 Laser Heating of Noble Gas Droplet Sprays: EUV Source Efficiency Considerations H.M. Milchberg (University of Maryland)
105 Performance Evaluation on Discharge and Laser Based EUV Sources Using Z 2-D Radiation MHD Modeling S.V. Zakharov et al (EPPRA SAS); V.G. Novikov (KIAM RAS); A.Y. Kroukovski (IMM RAS); K.D. Ware (ER2S, inc.)
106 The SOARING High Repetition Rate EUV Source Peter Choi et al (EPPRA); Mario Ravre et al (Pontificia Universidad Catolica de Chile); Vladimir Novikov (KIAM RAS); An Yuan et al (TRINITI RF SRC)
107 Modeling of Xenon EUV Emission Spectra & MHD Plasma Parameters for a DPF Light Source N. Bowering et al (Cymer, Inc.); M. Martins (Universitat Hamburg)
     
 
TOOL
  
108 EXCITE A MEDEA+ Extreme UV Consortium for Imaging Technology Peter Zandbergen (Philips Research); Wolf-Dieter Domke (Infineon Technologies AG); Peitro Cantu et al (STMicroelectronics); Andreas Wild (Motorola); Jean-Yves Robic (CEA-Leti)
109 EUV Microexposure Capabilities at the ALS using the 0.3-NA MET Optic Patric Nalleau et al (Lawrence Berkeley National Laboratory); Carl Chumg et al (Lawrence Livermore National Laboratory)
110 Evaluation of Low-Expansion, Electrostatic Clamp Materials for EUVL J. van Elp et al (TNO-TPD)
112 Electrostatic Pin Chucks from "Zero Expansion" Materials G. Kalkowski (Fraunhofer Institute); S. russe (Leica Microsystems GmbH)
113 Particle-Induced Distortion in EUVL Reticles during Exposure Chucking Eric Cotte et al (University of Wisconsin); Thomas White (AMD/International SEMATECH)
114 Influence of Reticle Thickness on Image Placement Accuracy  Liang Zheng et al (University of Wisconsin); Thomas White (AMD/International SEMATECH)
115 EUVL Mask Flatness and Electrostatic Chucking Analysis Andrew Mikkelson et al (University of Wisconsin); Kenneth Bledsel et al (Lawrence Livermore National Laboratory)
116 EUV Lithography Applied to the Coloration of LIF for Photonics Giuseppe Baldacchini et al (ENEA); Anatoly Faenov et al (MISDC of VNIFTRI); Tania Limongi et al (University of L'Aquila)
117 Fabrication and Alignment of 10X-Schwarzchild Optics for F2X Experiments Song Lee et al (Intel Corporation); Lou Marchetti (ASML); Michael Shumway et al (Lawrence Berkeley National Laboratory); Donald Phillion (Lawrence Livermore National Laboratory)
118 Status of the Micro Exposure Tool for EUV Microsteppers Eric Sohment et al (Carl Zeiss SMT AG); Koen van Ingen Schenau et al (ASML); Ralf Muller et al (PTB)
119 ESH Assessment of EUV Lithography Walter Worth (International SEMATECH)
120 Microstepper for EUV Lithography Philipp Grunewald et al (Exetech Ltd.)